Thin polycrystalline films of indium phosphide on low-cost substrates
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Thin polycrystalline films of indium phosphide on low-cost substrates

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Published by Energy Research and Development Administration, Division of Solar Energy, For sale by the National Technical Information Service in [Washington, D.C.], Springfield, Va .
Written in English


  • Photoelectric cells,
  • Indium ores,
  • Thin films

Book details:

Edition Notes

StatementR.P. Ruth ... [et al.] ; Rockwell International, Electronic Devices Division, Electronics Research Center
ContributionsRuth, R. P. 1925-, United States. Dept. of Energy, Rockwell International. Electronics Research Center
The Physical Object
Paginationvi, 71 p. :
Number of Pages71
ID Numbers
Open LibraryOL15476174M

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Journals & Books; Help Download full text in PDF Download. Share. Export. Advanced. Thin Solid Films. Vol Issue 3, 1 February , Pages Initial growth behaviour of indium phosphide on molybdenum substrates Cited by: 4. Preliminary solar cell devices are fabricated on a p‐type silicon with an indium‐tin‐oxide contact layer. It is believed that the new growth strategy provides a simpler, lower cost (both precursors and substrates) approach for producing high‐quality InP thin film for the fabrication of high efficiency, low‐cost solar by: 1. Thin films of InP were prepared from the CVD deposition of cyclohexylphosphine (PCH, 5) and trimethylindium at substrate temperatures above °C and at an organophosphine cracking temperature of °C on both silicon (Si) and InP() substrates ( by: 2. The relatively new "thin-film polycrystalline-silicon (pc-Si) (grain size of μm) solar cell on foreign substrate" technology aims at low-cost devices with energy conversion efficiencies.

Indium phosphide thin films were grown onto glass substrates by RF magnetron sputtering. In this paper, we present a study on the role of argon pressure and rf power on magnetron sputtered InP films. The growth of polycrystalline InP films on glass substrates by the pulsed laser deposition technique is reported. Optimal growth conditions as high vacuum and relatively low substrate temperature were necessary to obtain stoichiometric InP layers. Structural and morphological characterizations of the samples are by: 4. Thin Solid Films, () PREPARATION AND CHARACTERIZATION INTERFACE REACTIONS OF COPPER FILMS WITH POLYCRYSTALLINE INDIUM OR ANTIMONY AND SINGLE CRYSTAL InSb SUBSTRATES - MARINKOVIC AND V. SIMIC Institute of Physics, Studentski Belgrade (Yugoslavia) (Received Aug ; accepted Ma ) The results of investigations of interface reactions of copper films Cited by: 7. High optical quality polycrystalline indium phosphide grown on metal substrates by metalorganic chemical vapor deposition Maxwell Zheng,1,2 Zhibin Yu,1,2 Tae Joon Seok,1 Yu-Ze Chen,3 Rehan Kapadia,1,2 Kuniharu Takei,1,2 Shaul Aloni,4 Joel W. Ager,2 Ming Wu,1 Yu-Lun Chueh,3 and Ali Javey1,2,a) 1Department of Electrical Engineering and Computer Sciences, .

@article{osti_, title = {Thin films of gallium arsenide on low-cost substrates. Quarterly project report No. 3, January 2, April 2, }, author = {Ruth, R.P. Dapkus, P.D. and Dupuis, R.D. and Campbell, A.G. and Johnson, R.E. and Manasevit, H.M. and Moudy, L.A. and Yingling, R.D.}, abstractNote = {The metallorganic chemical vapor deposition (MO-CVD) . Indium Phosphide can be supplied in as-cut, etched or polished wafer forms. All slices are individually laser scribed with ingot and slice identity. to ensure perfect traceability. ORIENTATION SPECIFICATIONS. Surface orientations are offered to an accuracy of +/- degrees using a triple axis X-Ray diffractometer system. Indium gallium arsenide (InGaAs) thin film with indium phosphide (InP) buffer has been grown on p-type silicon () by Metal Organic Chemical Vapor Deposition (MOCVD) technique. The InP grows into a polycrystalline film with large (> μm) lateral grain sizes,36 The benefits of TF-VLS growth over traditional metalorganic chemical vapor deposition (MOCVD) growth are high throughput, high materials utilization efficiency, and non-epitaxial substrates.